a. leds cannot be made of silicon because silicon has a smaller band gap compared to gaas. b. gaas has a larger band-gap compared to silicon therefore it can absorb a larger portion of the sunlight energy. c. by adding impurities that facilitate and accelerate carrier recombination, solar cell efficiencies can be improved. . removed! m. work function of aluminum is smaller than the distance between conduction band of silicon and vacuum level, therefore, aluminum contacts with n-type silicon result in schottkey junctions.

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15-12-2022
Physics

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a. leds cannot be made of silicon because silicon has a smaller band gap compared to gaas. b. gaas has a larger band-gap compared to silicon therefore it can absorb a larger portion of the sunlight energy. c. by adding impurities that facilitate and accelerate carrier recombination, solar cell efficiencies can be improved. . removed! m. work function of aluminum is smaller than the distance between conduction band of silicon and vacuum level, therefore, aluminum contacts with n-type silicon result in schottkey junctions.

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AnnuG AnnuG · Answer 1 · 2022-12-25T01:28:07-05:00

a. LEDs cannot be made of silicon because silicon has a smaller band gap compared to GaAs. This statement is False.

b. GaAs has a larger band-gap compared to silicon therefore it can absorb a larger portion of the sunlight energy. This statement is also Not True.

c. by adding impurities that facilitate and accelerate carrier recombination, solar cell efficiencies can be improved. This is True.

a) LED's are p-n junction devices constructed of gallium arsenide, silicon not suitable because those junction produce heat and no appreciable IR or visible limit. So it is 'FALSE'.

b) GaAs has band gap of 1.52 ev and si has 1.0 ev but si has more absorption so it is 'FALSE'.

c) By adding impurity, concentration of charge carrier increases, so more efficiency; so it is 'TRUE'.

d) Yes it is TRUE : Aluminum work function is less so aluminum contacts with n-type silicon result in Schottky junction.

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