Answer :
Yes, this statement is true, the reverse breakdown voltage of a pn junction decrease as the doping levels increase.
We know,
The more is the concentration of doping in the pn junction, the less is the width of the depletion region.
We have to apply a electric voltage to make the break down. Because electric voltage creates an electric field in the depletion region.
Because of the smaller electric field, a small voltage can easily break the potential barrier of the biasing.
A very large number of electron-hole pairs jumps across the depletion region and the breakdown occurs.
Because the depletion region was thin. A small voltage did the job.
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